Portal de Periódicos da CAPES

Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures

2005; American Institute of Physics; Volume: 86; Issue: 10 Linguagem: Inglês

10.1063/1.1881789

1520-8842

Xin Dong, Christoph Adelmann, Jing Xie, C. J. Palmstrøm, X. Lou, J. Strand, P. A. Crowell, Jean‐Paul Barnes, A. K. Petford‐Long,

Magnetic and transport properties of perovskites and related materials

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co_2MnGe decays more rapidly with increasing temperature.