GaN 0.011 P 0.989 red light-emitting diodes directly grown on GaP substrates
2000; American Institute of Physics; Volume: 77; Issue: 13 Linguagem: Inglês
10.1063/1.1311957
ISSN1520-8842
AutoresH. P. Xin, R.J. Welty, C. W. Tu,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoRed light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P0.989 p–n homojunction grown on a (100) GaP substrate by gas-source molecular beam epitaxy with a rf plasma nitrogen source have been obtained. The integrated photoluminescence intensity of GaNP p–n homojunction LED is 5 times stronger than that of Ga0.51In0.49P bulk layer, but the peak width is much broader. Compared to conventional high-brightness AlGaInP red LEDs, our LED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate.
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