High energy density metal-insulator-metal capacitors with Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin films
2008; American Institute of Physics; Volume: 92; Issue: 1 Linguagem: Inglês
10.1063/1.2828700
ISSN1520-8842
AutoresN. K. Karan, José Javier Saavedra-Arias, María-Eglée Pérez, Reji Thomas, R. S. Katiyar,
Tópico(s)Semiconductor materials and devices
ResumoMetal-insulator-metal capacitors with high-k Ba[(Ni1∕2,W1∕2)0.1Ti0.9]O3 thin film dielectrics were fabricated by chemical solution deposition technique. High dielectric constant (85), low dielectric loss (0.007), and high breakdown field (∼3.0MV∕cm) at room temperature were achieved. The temperature and frequency dependences of capacitance and loss tangent were small around room temperature (300±25K). At room temperature, high capacitance density (3.1fF∕μm2) along with high energy density (34J∕cm3) and low leakage current (7.7×10−6A∕cm2 at 20V) were obtained, indicating high potential for this material in the integrated circuits and power electronic applications.
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