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P-Type Doping of the Group V Elements in CuInS 2

1996; Institute of Physics; Volume: 35; Issue: 12A Linguagem: Inglês

10.1143/jjap.35.l1562

1347-4065

Tetsuya Yamamoto, Hiroshi Katayama‐Yoshida,

Quantum Dots Synthesis And Properties

We have studied the electronic structures of p -type doped CuIn(S 0.9375 V 0.0625 ) 2 (V=N, P, As, Sb or Bi) based on ab-initio electronic band structure calculations using the augmented spherical wave (ASW) method. We determined that P and Sb atoms are extremely suitable dopants which can be substituted for S atoms in p -type doped CuInS 2 crystals with lower resistivity. On the other hand, p -type CuInS 2 crystals doped with N or Bi had a higher resistivity than those doped with P or Sb.