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200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

1998; American Institute of Physics; Volume: 16; Issue: 1 Linguagem: Inglês

10.1116/1.589805

1520-8567

Michael Current, Dominik Clara Luz Lopes, M.A. Foad, Jonathan England, Cameron W. Jones, D. Su,

Semiconductor materials and interfaces

Atomic profiles (secondary ion mass spectroscopy) and cross-section transmission electron microscopy (TEM) images of selectively etched, annealed profiles were studied for boron energies from 200 eV to 10 keV and rapid thermal processing anneals at 900, 975, and 1050 °C. Consistent variations of dopant depth were obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the polymask.