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Growth of crystalline γ-Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

2007; American Institute of Physics; Volume: 102; Issue: 2 Linguagem: Inglês

10.1063/1.2753684

1520-8850

Clément Merckling, Mario El Kazzi, Guillaume Saint‐Girons, G. Hollinger, Ludovic Largeau, G. Patriarche, V. Favre‐Nicolin, Olivier Marty,

Integrated Circuits and Semiconductor Failure Analysis

This work reports on the molecular beam epitaxy of high quality single crystal γ-Al2O3 thin films on Si(001) and Si(111) substrates. For both substrate orientations, film surfaces are found to be smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers. Reflection high energy electron diffraction, x-ray diffraction, and transmission electronic microscopy characterizations were used to study the epitaxial relationship and the structural quality of the γ-Al2O3 layers depending on the Si substrate orientation. On Si(111), the alumina layers present a high crystalline quality. Evidence is made for a “two-for-three” unit cell indirect epitaxial relationship between γ-Al2O3 and Si(111). On Si(001), after a transition from cubic to hexagonal surface symmetry, the growth planes of γ-Al2O3 change from (001) to (111) leading to a bidomain growth.