Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation
1990; Elsevier BV; Linguagem: Inglês
10.1016/s0080-8784(08)62556-9
ISSN0080-8784
AutoresOsamu Oda, Kiyofumi Katagiri, K. Shinohara, S. Katsura, Yuichiro Takahashi, K. Kainosho, K. Kohiro, R. Hirano,
Tópico(s)Semiconductor materials and interfaces
ResumoPublisher Summary This chapter presents a study on indium phosphide (InP) crystal growth—substrate preparation and evaluation. InP is a III–V compound semiconductor, which is a very promising material for increasing applications in optoelectronic communications, optoelectronic integrated circuits (OEICs), high-speed devices, such as metal insulator–semiconductor field effect transistors (MISFDTs), and solar cells. InP has some superior physical properties compared with other III–V compounds, the demand and application are being extended year by year. This extension was apparent after 1981 when optical fiber communication was made practical by the use of InP substrates. InP is a direct-transition-type compound semiconductor. The fundamental physical properties of InP are described in the chapter. To synthesize InP polycrystalline material, high-pressure horizontal Bridgman technique, high-pressure gradient freezing technique, synthesis by the solute diffusion technique (SSD technique), and direct synthesis in a high-pressure puller are performed. Photoluminescence is an effective technique for the evaluation of the purity of InP.
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