HfO x N y gate dielectric on p-GaAs
2009; American Institute of Physics; Volume: 94; Issue: 7 Linguagem: Inglês
10.1063/1.3079409
ISSN1520-8842
AutoresGoutam Kumar Dalapati, Aaditya Sridhara, Alvin Wong, C. K. Chia, D. Z.,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoPlasma nitridation method is used for nitrogen incorporation in HfO2 based gate dielectrics for future GaAs-based devices. The nitrided HfO2 (HfOxNy) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10−6 A cm−2 have been achieved at VFB−1 V for nitrided HfO2 films. A nitride interfacial layer (GaAsO:N) was observed at HfO2–GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO2 film.
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