Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain
2012; IOP Publishing; Volume: 21; Issue: 1 Linguagem: Inglês
10.1088/1674-1056/21/1/016104
ISSN2058-3834
Autores Tópico(s)VLSI and Analog Circuit Testing
ResumoA comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.
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