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Oxygen deficiency defects in amorphous Al2O3

2010; American Institute of Physics; Volume: 108; Issue: 1 Linguagem: Inglês

10.1063/1.3455843

1520-8850

Timofey V. Perevalov, O. E. Tereshenko, V. A. Gritsenko, В. А. Пустоваров, Alexander Yèlisseyev, Chanjin Park, Jeong Hee Han, Choongman Lee,

Ga2O3 and related materials

In the electron energy loss spectra for amorphous, atomic layer deposited (ALD) Al2O3 film, a peak at 6.4 eV was observed. First principle quantum chemical simulation shows that it relates to excitation of neutral oxygen vacancy in Al2O3. The 2.91 eV luminescence excited in a band near 6.0 eV in amorphous Al2O3 is similar to that in bulk crystals which is associated with neutral oxygen vacancy. Thus, the amorphous ALD Al2O3 film is oxygen deficient and the oxygen vacancy parameters are similar in crystalline and amorphous Al2O3.