Gas diffusion barriers on polymers using Al2O3 atomic layer deposition
2006; American Institute of Physics; Volume: 88; Issue: 5 Linguagem: Inglês
10.1063/1.2168489
ISSN1520-8842
AutoresMarkus D. Groner, Steven M. George, R. Scott McLean, P. F. Carcia,
Tópico(s)Thin-Film Transistor Technologies
ResumoThin films of Al2O3 grown by atomic layer deposition (ALD) were investigated as gas diffusion barriers on flexible polyethylene naphthalate and Kapton® polyimide substrates. Al2O3 ALD films with thicknesses of 1–26nm were grown at 100–175°C. For Al2O3 ALD films with thicknesses ⩾5nm, oxygen transmission rates were below the MOCON instrument test limit of ∼5×10−3cc∕m2∕day. Applying a more sensitive radioactive tracer method, H2O-vapor transmission rates of ∼1×10−3g∕m2∕day were measured for single-sided Al2O3 ALD films with thicknesses of 26nm on the polymers. Ultrathin gas diffusion barriers grown by Al2O3 ALD may enable organic displays and electronics on permeable, flexible polymer substrates.
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