X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition
2001; American Institute of Physics; Volume: 79; Issue: 23 Linguagem: Inglês
10.1063/1.1421642
ISSN1520-8842
AutoresJianming Zhu, H. X. Qin, Z. H. Bao, Y. N. Wang, Wenwen Cai, P. P. Chen, Wei Lü, H. L. W. Chan, C. L. Choy,
Tópico(s)Multiferroics and related materials
ResumoGood ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4.
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