Si 1−y C y / Si (001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy
1997; American Institute of Physics; Volume: 71; Issue: 5 Linguagem: Inglês
10.1063/1.119819
ISSN1520-8842
AutoresK. B. Joelsson, W.-X. Ni, Г. Позина, Henry H. Radamson, G. V. Hansson,
Tópico(s)Silicon Carbide Semiconductor Technologies
ResumoPreparation of pseudomorphic Si1−yCy/Si(001) heterostructures using Si molecular beam epitaxy with C obtained from SiC sublimation in a high-temperature cell has been studied. Thick (≈2000 Å) homogenous Si1−yCy layers, y⩽1.5%, and Si1−yCy/Si multiple quantum well (MQW) structures, y⩽8%, have been prepared. There is a growth temperature dependent surface roughness accumulating during the growth sequence that can lead to reduction of C induced strain. Temperature modulation during growth has been used to suppress this effect. Near band gap photoluminescence is reported from Si1−yCy/Si MQW structures.
Referência(s)