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Transmission measurement at 10.6μm of Te2As3Se5 rib waveguides on As2S3 substrate

2007; American Institute of Physics; Volume: 90; Issue: 1 Linguagem: Inglês

10.1063/1.2430404

1520-8842

Caroline Vigreux, E. Bonhomme, A. Pradel, Jean‐Emmanuel Broquin, Lucas Labadie, P. Kern,

Chalcogenide Semiconductor Thin Films

The feasibility of chalcogenide rib waveguides working at λ=10.6μm has been demonstrated. The waveguides comprised a several micron thick Te2As3Se5 film deposited by thermal evaporation on a polished As2S3 glass substrate and further etched by physical etching in Ar or CF4∕O2 atmosphere. Output images at 10.6μm and some propagation losses roughly estimated at 10dB∕cm proved that the obtained structures behaved as channel waveguides with a good lateral confinement of the light. The work opens the doors to the realization of components able to work in the mid- and thermal infrared up to 20μm and even more.