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High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-k Interconnects

2010; Institute of Physics; Volume: 49; Issue: 5S2 Linguagem: Inglês

10.1143/jjap.49.05fd04

1347-4065

J. Nakahira, Shuji Nagano, A. Gawase, Yoshi Ohashi, Hideharu Shimizu, Shinichi Chikaki, Noriaki Oda, Sosuke Kondo, Satoshi Hasaka, Shuichi Saito,

Silicon Carbide Semiconductor Technologies

Copper (Cu)/low- k interconnects were fabricated using novel Cu diffusion-barrier SiC films deposited with a novel precursor, 1,1-divinyl-silacyclopentane (DVScP). At 46% overetching time, the yield of the via-contact with the dielectric barrier of conventional SiC films was seriously reduced, while that of the novel SiC films was hardly reduced. By using the novel SiC films, the thickness of diffusion barriers was successfully reduced to 15 nm, matching the 32 nm node and beyond. By using the novel SiC films, the dielectric constant of the barrier films was decreased and their thickness was reduced with no yield reduction of the via-contact. As a result, the product of wiring resistance and capacitance (RC product) was reduced by 11.4%. The time-dependent dielectric breakdown (TDDB) lifetime of Cu interconnects with the SiC films was similar to that with the SiCO films.