Auger recombination dynamics of In x Ga 1- x Sb
1999; IOP Publishing; Volume: 14; Issue: 12 Linguagem: Inglês
10.1088/0268-1242/14/12/302
ISSN1361-6641
AutoresP. C. Findlay, C. R. Pidgeon, H.P.M. Pellemans, R. T. Kotitschke, B. N. Murdin, T. Ashley, A. D. Johnson, A. M. White, C.T. Elliott,
Tópico(s)Spectroscopy and Laser Applications
ResumoThe alloy In1-xGaxSb has been identified as potentially an important component in mid-infrared laser diodes which use band structure engineering of quantum structures based on the narrow-gap III-V material InSb. A pump-probe measurement has been made of carrier recombination in bulk In1-xGaxSb, for a range of alloy compositions. Over the range of excited carrier densities (5 × 1016-3 × 1017 cm-3) and at the temperatures (30-300 K) studied experimentally, contributions to the recombination from Auger, Shockley-Read-Hall and radiative mechanisms were calculated using an analytic approximation, with carrier degeneracy included. Excellent agreement with experiment was obtained over the alloy range x = 0.0-0.2 (corresponding to a room-temperature energy gap variation from 0.175 eV to 0.215 eV). Numerically the room-temperature Auger coefficient, C, decreased from the value 1.17 × 1026 cm6 s-1 at x = 0 (i.e. InSb) to 0.98 × 1026 cm6 s-1 at x = 0.2. The fact that C decreases with energy gap increase, in good agreement with theoretical predictions, is important for strained layer quantum well device applications.
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