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Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics

2001; American Institute of Physics; Volume: 90; Issue: 1 Linguagem: Inglês

10.1063/1.1334638

1520-8850

Masanori Sugiura, Kazuyuki Uragou, M. Tachiki, Takeshi Kobayashi,

Ferroelectric and Piezoelectric Materials

We have explored electrical trap levels inside SrTiO3 epitaxial films grown by the pulsed laser deposition method from electrical measurements of semiconducting oxide p-i-n diodes consisting of La0.85Sr0.15MnO3/SrTiO3/La0.05Sr0.95TiO3 trilayers. The prepared p-i-n diodes exhibited a marked temperature dependence in their current–voltage (I–V) characteristics. By attributing the temperature dependence of I–V curves to the space-charge limitation due to the trapped charges inside the i-SrTiO3 layer, we estimated crudely the level of the dominant trap in the SrTiO3 layer as ∼0.09 eV. The trap density was also estimated from the curve-fitting technique. At this moment, the trap densities were 1016 and 1018/cm3 when SrTiO3 layers were grown at 650 and 630 °C, respectively.