GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
2005; American Institute of Physics; Volume: 86; Issue: 6 Linguagem: Inglês
10.1063/1.1861122
ISSN1520-8842
AutoresP. D. Ye, Bingzheng Yang, K.K. Ng, J. Bude, G. D. Wilk, Subrata Halder, James C. M. Hwang,
Tópico(s)Ga2O3 and related materials
ResumoWe report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor (HEMT) of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD Al2O3∕AlGaN interface is of high quality and the ALD Al2O3∕AlGaN∕GaN MOS-HEMT is of high potential for high-power rf applications. In addition, the high-quality ALD Al2O3 gate dielectric allows the effective two-dimensional (2D) electron mobility at the AlGaN∕GaN heterojunction to be measured under a high transverse field. The resulting effective 2D electron mobility is much higher than that typical of Si, GaAs or InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs).
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