Alloy states in dilute GaAs1−xNx alloys (x<1%)
2003; American Institute of Physics; Volume: 82; Issue: 11 Linguagem: Inglês
10.1063/1.1560872
ISSN1520-8842
AutoresXiao Luo, J. S. Huang, Z. Y. Xu, Cheng Yang, Jiacheng Liu, Weikun Ge, Yong Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu,
Tópico(s)Semiconductor materials and interfaces
ResumoA set of GaAs1−xNx samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states.
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