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Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

2005; American Institute of Physics; Volume: 87; Issue: 16 Linguagem: Inglês

10.1063/1.2108123

1520-8842

D. Toyota, I. Ohkubo, Hiroshi Kumigashira, M. Oshima, Tsuyoshi Ohnishi, Mikk Lippmaa, M. Takizawa, A. Fujimori, Kanta Ono, M. Kawasaki, Hideomi Koinuma,

Electronic and Structural Properties of Oxides

In situ thickness-dependent photoemission spectroscopy (PES) has been performed on SrRuO3 (SRO) layers deposited on SrTiO3 substrates to study the structure-induced evolution of the electronic structure. The PES spectra showing the existence of two critical film thicknesses reveal that a metal-insulator transition occurs at a film thickness of 4–5 monolayers (ML) and the evolution of Ru 4d-derived states around the Fermi level (EF) saturates at about 15 ML. The observed spectral behavior well matches the electric and magnetic properties and thickness-dependent evolution of surface morphology of the ultrathin SRO films. These experimental results suggest the importance of the disorder associated with the unique growth-mode transition in SRO films.