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InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER

1969; American Institute of Physics; Volume: 14; Issue: 9 Linguagem: Inglês

10.1063/1.1652810

1520-8842

B. F. Williams,

GaN-based semiconductor devices and materials

The photoemission and thermionic emission from heat-treated In0.3Ga0.7As coated with very thin layers of Cs and O have been measured. The photothreshold occurred at about the band gap of 0.95 eV and the thermionic work function was determined to be 0.7 ± 0.1 eV.