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Closed-Loop d<inline-formula><tex-math notation="LaTeX">${\bm i}/$</tex-math></inline-formula>d <inline-formula><tex-math notation="LaTeX">${\bm t}$</tex-math></inline-formula> and d<inline-formula> <tex-math notation="LaTeX">${\bm v}/$</tex-math></inline-formula>d<inline-formula><tex-math notation="LaTeX">${\bm t}$ </tex-math></inline-formula> IGBT Gate Driver

2014; Institute of Electrical and Electronics Engineers; Volume: 30; Issue: 6 Linguagem: Inglês

10.1109/tpel.2014.2332811

1941-0107

Yanick Lobsiger, Johann W. Kolar,

Electrostatic Discharge in Electronics

This paper proposes a new concept for attaining a defined switching behavior of insulated-gate bipolar transistors (IGBTs) at inductive load (hard) switching, which is a key prerequisite for optimizing the switching behavior in terms of switching losses and electromagnetic interference (EMI). First, state-of-theart gate driver concepts that enable a control of the IGBT's switching transients are reviewed. Thereafter, a highly dynamic closed-loop IGBT gate driver using simple passive di C /dt and dv CE /dt feedbacks and employing a single analog PI-controller is proposed. Contrary to conventional passive gate drivers, this concept enables an individual control of the current and voltage slopes largely independent of the specific parameters or nonlinearities of the IGBT. Accordingly, a means for optimizing the tradeoff between switching losses, switching delay times, reverse recovery current of the freewheeling diode, turn-off overvoltage, and EMI is gained. The operating principle of the new gate driver is described and based on derived control oriented models of the IGBT, a stability analysis of the closed-loop control is carried out for different IGBT modules. Finally, the proposed concept is experimentally verified for different IGBT modules and compared to a conventional resistive gate driver.