Photoluminescence in a - Si 1 − x Ge <mml:mrow…
1987; American Physical Society; Volume: 35; Issue: 17 Linguagem: Inglês
10.1103/physrevb.35.9222
ISSN1095-3795
AutoresRadha Ranganathan, M. Gál, J. M. Viner, P. C. Taylor,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe photoluminescence (PL) of alloys in the system a-${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x}}$:H shows the presence of two bands, one which peaks at higher energies (1.2--1.4 eV in a-Si:H) and one which peaks at lower energies (0.8--0.9 eV). For all values of x studied (0\ensuremath{\le}x\ensuremath{\le}0.52), the position of the low-energy peak is independent of Ge concentration. The samples we have studied exhibit a low-energy tail to the PL efficiency which is of constant magnitude independent of x. There is a departure from this behavior only when the low-energy PL peak is present.
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