Artigo Acesso aberto Revisado por pares

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

2015; Optica Publishing Group; Volume: 23; Issue: 20 Linguagem: Inglês

10.1364/oe.23.026834

ISSN

1094-4087

Autores

Ruijun Wang, Stephan Sprengel, Muhammad Muneeb, Gerhard Boehm, Roel Baets, Markus‐Christian Amann, Günther Roelkens,

Tópico(s)

Semiconductor Quantum Structures and Devices

Resumo

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

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