Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors
2007; American Institute of Physics; Volume: 91; Issue: 7 Linguagem: Inglês
10.1063/1.2772666
ISSN1520-8842
AutoresHao Yang, M. Jain, N. A. Suvorova, Hanhan Zhou, Hongmei Luo, David Feldmann, P. C. Dowden, R.F. DePaula, S. R. Foltyn, Q. X. Jia,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoEpitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density versus. electric field characteristics were investigated from 80to350K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150K, space-charge-limited current was the dominant leakage mechanism for both negative and positive biases. On the other hand, at temperatures between 200 and 350K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive biases, respectively.
Referência(s)