Quantum well infrared photodetectors
2000; Elsevier BV; Linguagem: Inglês
10.1016/b978-012513760-7/50051-4
Autores Tópico(s)Spectroscopy and Laser Applications
ResumoThis chapter reviews the device physics, structures, characteristics, and performance parameters for a wide variety of n- and p-type QWIPs. Using intersubband transitions and bandgap engineering, single- and multicolor QWIPs with detection wavelengths ranging from 3.4 to 16 μm have been presented in this work. The basic device physics and the performance parameters of QWIPs have been described. Theoretical considerations include the calculations of the electronic states in quantum well using multilayer transfer matrix method (TMM), the physics of intersubband transitions, the effects of strain in the quantum well on the energy bandgap and band offset in the strained-layer QWIPs, and the performance parameters of QWIPs. Two p-type CSL-QWIPs using InGaAs/A1GaAs material system grown on GaAs substrates and a p-type TSL-InGaAs/InA1As QWIP grown on InP substrates have been presented. The advantages of using strained layer p-type QWIPs over the unstrained case have also been discussed. Several multicolor QWIPs for both MWIR and LWIR detection is also discussed. In comparing with HgCdTe LWIR detectors, QWIPs have the advantages of higher uniformity, higher reproducibility, and higher operability in large format FPAs with the potential of higher yields and lower costs due to the mature III-V semiconductor epitaxial growth (MBE) and processing technologies.
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