Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
2015; American Association for the Advancement of Science; Volume: 349; Issue: 6247 Linguagem: Inglês
10.1126/science.aab4097
ISSN1095-9203
AutoresMingyang Li, Yumeng Shi, Chia-Chin Cheng, Li‐Syuan Lu, Yung‐Chang Lin, Haolin Tang, Meng‐Lin Tsai, Chih‐Wei Chu, Kung‐Hwa Wei, Jr‐Hau He, Wen‐Hao Chang, Kazu Suenaga, Lain‐Jong Li,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoElectronic junctions on edge Two-dimensional materials such as graphene are attractive materials for making smaller transistors because they are inherently nanoscale and can carry high currents. However, graphene has no band gap and the transistors are “leaky”; that is, they are hard to turn off. Related transition metal dichalcogenides (TMDCs) such as molybdenum sulfide have band gaps. Transistors based on these materials can have high ratios of “on” to “off” currents. However, it is often difficult to make a good voltage-biased (p-n) junction between different TMDC materials. Li et al. succeeded in making p-n heterojunctions between two of these materials, molybdenum sulfide and tungsten selenide. They did this not by stacking the layers, which make a weak junction, but by growing molybdenum sulfide on the edge of a triangle of tungsten selenide with an atomically sharp boundary Science , this issue p. 524
Referência(s)