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GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

2015; American Institute of Physics; Volume: 118; Issue: 10 Linguagem: Inglês

10.1063/1.4930594

1520-8850

Tommaso Orzali, Alexey Vert, Brendan O’Brien, Joshua L. Herman, Saikumar Vivekanand, Richard J. Hill, Zia Karim, Satyavolu S. Papa Rao,

Thin-Film Transistor Technologies

The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO2 patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, together with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are {111} twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 108 cm−2, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on {111} Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.