Novel Batch Titanium Nitride CVD Process for Advanced Metal Electrodes
2008; Institute of Physics; Volume: 13; Issue: 1 Linguagem: Inglês
10.1149/1.2911530
ISSN2151-2051
AutoresP. M. Zagwijn, Wilco Verweij, Dieter Pierreux, Noureddine Adjeroud, R.G. Bankras, Ed Oosterlaken, Gert Jan Snijders, Michiel Van den Hout, Pamela R. Fischer, Rudi Wilhelm, Martin Knapp,
Tópico(s)Copper Interconnects and Reliability
ResumoThis article describes a novel CVD process for TiN films developed in a 300 mm Vertical Furnace. We have solved Chlorine incorporation at low temperature inside the TiN layer while at the same time the batch process yields a 3 times higher throughput per dual reactor system compared to a single wafer system with 3 chambers.We show process results for load sizes ranging from 5 to as much as 100 wafers that prove filler wafers are only required to a minimum. Applications of the developed TiN process in Metal-Insulator-Metal memory devices such as Deep Trench DRAM, Stack DRAM, as well as Control Electrodes in Charge trapping Flash memory
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