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Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures

2015; American Institute of Physics; Volume: 107; Issue: 8 Linguagem: Inglês

10.1063/1.4928981

1520-8842

Monica Bollani, Daniel Chrastina, L. Gagliano, L Rossetto, Daniele Scopece, Michael Barget, V. Mondiali, Jacopo Frigerio, Mario Lodari, Fabio Pezzoli, Francesco Montalenti, Emiliano Bonera,

Advancements in Semiconductor Devices and Circuit Design

We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.