P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics
2015; Wiley; Volume: 46; Issue: 1 Linguagem: Inglês
10.1002/sdtp.10031
ISSN2168-0159
AutoresManoj Nag, Steve Smout, Ajay Bhoolokam, Robert Müller, Marc Ameys, Kris Myny, Sarah Schols, Brian Cobb, Abhishek Kumar, Gerwin H. Gelinck, Mitsuhiro Murata, G. Groeseneken, Paul Heremans, Soeren Steudel,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoIn this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self‐aligned (SA) top gate amorphous‐Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) TFT characteristics. Finally an optimized layer was integrated in TFT backplane on polyimide (PI) foil and a QQVGA AMOLED display is demonstrated.
Referência(s)