Pt/Ta 2 O 5 /HfO 2− x /Ti Resistive Switching Memory Competing with Multilevel NAND Flash
2015; Volume: 27; Issue: 25 Linguagem: Inglês
10.1002/adma.201501167
ISSN1521-4095
AutoresJung Ho Yoon, Kyung Min Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Xinglong Shao, Cheol Seong Hwang,
Tópico(s)Semiconductor materials and devices
ResumoPt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
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