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Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties

2015; Wiley; Volume: 252; Issue: 5 Linguagem: Inglês

10.1002/pssb.201451589

1521-3951

Pierre‐Marie Coulon, Blandine Alloing, Virginie Brändli, Denis Lefebvre, Sébastien Chenot, J. Zúñiga‐Pérez,

Nanowire Synthesis and Applications

Site‐controlled growth of GaN nanowires (NWs) on GaN‐on‐sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous‐flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga‐polar substrates. The lateral growth rate, that is, perpendicular to the c ‐axis, could be further controlled using appropriate growth temperatures and H 2 /N 2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed.