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Effect of Anneal Conditions on Electrical Properties of Mn-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Films Prepared by Sol-Gel Method

2011; Wiley; Volume: 94; Issue: 6 Linguagem: Inglês

10.1111/j.1551-2916.2010.04325.x

1551-2916

Yunyi Wu, Xiaohui Wang, Caifu Zhong, Longtu Li,

Microwave Dielectric Ceramics Synthesis

Journal of the American Ceramic SocietyVolume 94, Issue 6 p. 1843-1849 Effect of Anneal Conditions on Electrical Properties of Mn-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Films Prepared by Sol–Gel Method Yunyi Wu, Corresponding Author Yunyi Wu State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China†Author to whom correspondence should be address. e-mail: wuyunyi_80@yahoo.com.cnSearch for more papers by this authorXiaohui Wang, Xiaohui Wang State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorCaifu Zhong, Caifu Zhong State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorLongtu Li, Longtu Li State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this author Yunyi Wu, Corresponding Author Yunyi Wu State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China†Author to whom correspondence should be address. e-mail: wuyunyi_80@yahoo.com.cnSearch for more papers by this authorXiaohui Wang, Xiaohui Wang State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorCaifu Zhong, Caifu Zhong State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this authorLongtu Li, Longtu Li State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, ChinaSearch for more papers by this author First published: 21 March 2011 https://doi.org/10.1111/j.1551-2916.2010.04325.xCitations: 42 C. Randall—contributing editor This work was supported by the National Science Fund for Distinguished Young Scholars (Grant No. 50625204), Science Fund for Creative Research Groups (Grant No.50921061), the Ministry of Science and Technology of China through 973-project under Grant 2009CB623301, Outstanding Tutors for doctoral dissertations of S&T project in Beijing (No.YB2081000302), and by Tsinghua university initiative scientific research program (No. 303002261) and China Postdoctoral Science Foundation (No. 20100470349). Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Mn-doped (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT-Mn) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates via an aqueous sol–gel method and annealed at different temperatures from 550° to 800°C. Two different crystallization processes, i.e., single crystallization and multiple crystallizations, were used. The structures of the films were analyzed using X-ray diffraction, which shows that the NKBT-Mn thin film prepared by multiple crystallizations crystallize into the pure perovskite phase, while pyrochlore phase formed in the film prepared by the single crystallization. Ferroelectric and dielectric properties of NKBT-Mn thin films are quite dependent on the anneal temperature. The Pr value was a maximum for the 700oC-annealed thin film and decreased with both decreasing and increasing anneal temperature. The NKBT-Mn thin film annealed at 700°C had the largest ɛr of 426 and the lowest tan δ of 0.061. At the same time, the temperature-dependent ferroelectric property was also investigated from room temperature to −150°C. It is found that Pr of the film sample increases as temperature decreases, which can be well explained by a temperature-dependent charged carriers–domain wall interaction. Current density measurement indicates that the change in morphology with increasing anneal temperature and the volatility of Bi and Na/K at high temperature may responsible for the change in leakage current density and the NKBT-Mn thin film annealed at 700°C has the lowest leakage current of 7.6 × 10−5 A/cm2. Citing Literature Volume94, Issue6June 2011Pages 1843-1849 RelatedInformation