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42.4L: Late‐News Paper : 4 inch QVGA AMOLED Driven by the Threshold Voltage Controlled Amorphous GIZO (Ga 2 O 3 ‐In 2 O 3 ‐ZnO) TFT

2008; Wiley; Volume: 39; Issue: 1 Linguagem: Inglês

10.1889/1.3069743

2168-0159

Kyoung‐Seok Son, Tae‐Sang Kim, Jongwan Jung, Myungkwan Ryu, Kyung‐Bae Park, Byungwook Yoo, Jungwoo Kim, Young‐Gu Lee, Jang‐Yeon Kwon, Sangyoon Lee, Jongmin Kim,

Transition Metal Oxide Nanomaterials

Abstract We successfully fabricated GIZO (Ga 2 O 3 ‐In 2 O 3 ‐ZnO) TFTs with high mobility of 2.6 cm 2 /Vs and threshold voltage standard deviation of 0.7V which is comparable to that of a‐Si TFTs. Because conventional 5 mask process and bottom gate TFT structure of back channel etch type with channel length of 5 μm is used, it is expected to be transferred to mass production line in near future. Also we report the dependency of threshold voltage on the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.