Artigo Acesso aberto Revisado por pares

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

2015; Institute of Physics; Volume: 48; Issue: 36 Linguagem: Inglês

10.1088/0022-3727/48/36/363001

ISSN

1361-6463

Autores

Jiang Wu, Siming Chen, A.J. Seeds, Huiyun Liu,

Tópico(s)

Photonic and Optical Devices

Resumo

Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called 'artificial atoms', exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.

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