DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS
1971; American Institute of Physics; Volume: 18; Issue: 11 Linguagem: Inglês
10.1063/1.1653501
ISSN1520-8842
Autores Tópico(s)Quantum Dots Synthesis And Properties
ResumoWe report a new technique for measuring the stimulated emission spectrum and optical gain of semiconductor materials. Amplified spontaneous emission is used to determine the gain factor by relating the measured variation in light output to variation in the length of the excitation beam. Results for CdS crystals at 2°K are presented that indicate net gains as high as 160 cm−1 at λ = 4907 Å are possible with ∼ 12-MW/cm2 optical pump power density from a nitrogen laser.
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