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Luminescence spectra of an n -channel metal-oxide-semiconductor field-effect transistor at breakdown

1990; American Institute of Physics; Volume: 56; Issue: 12 Linguagem: Inglês

10.1063/1.102547

1520-8842

Naresh C. Das, B. M. Arora,

Integrated Circuits and Semiconductor Failure Analysis

Photon emission occurs from the drain gate boundary of a metal-oxide-semiconductor field-effect transistor when drain bias exceeds the drain-to-source breakdown value. Spectral measurement of luminescence has been carried out over a wide range 0.7–3.1 eV in order to understand the origin of the emission. Three different types of detectors are used to measure the luminescence spectrum. A continuous broad spectrum is observed with a peak near 1.0 eV. The emission intensity decreases almost exponentially in the higher energy range.