Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
2002; American Institute of Physics; Volume: 80; Issue: 17 Linguagem: Inglês
10.1063/1.1473701
ISSN1520-8842
AutoresW. S. Tan, P. A. Houston, P. J. Parbrook, David Wood, G. Hill, C. R. Whitehouse,
Tópico(s)Ga2O3 and related materials
ResumoThe gate leakage behavior in AlGaN/GaN heterostructure field-effect transistors was studied as a function of applied bias, temperature, and surface periphery. A surface hopping conduction mechanism with an activation energy of 0.21 eV is proposed for the gate–drain leakage for voltages that exceed pinchoff. The reverse breakdown voltage of the device exhibited a negative temperature coefficient of −0.11 V K−1, suggesting that a breakdown mechanism other than impact ionization, such as thermal runaway, may be responsible.
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