High Excitation Effects and Relaxation Dynamics in CdS/ZnSe Single Quantum Wells
2002; Wiley; Volume: 229; Issue: 2 Linguagem: Inglês
10.1002/1521-3951(200201)229
ISSN1521-3951
AutoresM. Schmidt, H. Priller, B. Dal Don, M. Dremel, M. Gr�n, H. Kalt, C. Klingshirn,
Tópico(s)Chalcogenide Semiconductor Thin Films
Resumophysica status solidi (b)Volume 229, Issue 2 p. 643-646 Original Paper High Excitation Effects and Relaxation Dynamics in CdS/ZnSe Single Quantum Wells M. Schmidt, M. Schmidt martin.schmidt@physik.uni-karlsruhe.de Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorH. Priller, H. Priller Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorB. Dal Don, B. Dal Don Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorM. Dremel, M. Dremel Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorM. Grün, M. Grün Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorH. Kalt, H. Kalt Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorC. Klingshirn, C. Klingshirn Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this author M. Schmidt, M. Schmidt martin.schmidt@physik.uni-karlsruhe.de Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorH. Priller, H. Priller Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorB. Dal Don, B. Dal Don Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorM. Dremel, M. Dremel Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorM. Grün, M. Grün Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorH. Kalt, H. Kalt Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this authorC. Klingshirn, C. Klingshirn Institut für Angewandte Physik, Universität Karlsruhe, Wolfgang-Gaede-Str. 1, D-76131 Karlsruhe, GermanySearch for more papers by this author First published: 16 January 2002 https://doi.org/10.1002/1521-3951(200201)229:2 3.0.CO;2-JCitations: 11AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract Photoluminescence of the ground and excited states of type II CdS/ZnSe single quantum wells with different width is investigated for high electron densities and by means of time resolved photoluminescence measurements. For high excitation intensities the filling of states in the QW up to energies of the second excited state can be observed. The PL decay times of the ground state vary from 2–36 ns for different samples and depend strongly on the QW width. This dependence can be explained with the overlap of electron and hole wavefunctions. The PL rise time of the ground state is influenced by inter- and intrasubband relaxation, which is induced by the cooling of hot carriers. Citing Literature Volume229, Issue2January 2002Pages 643-646 RelatedInformation
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