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Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

1979; Institute of Electrical and Electronics Engineers; Volume: 26; Issue: 7 Linguagem: Inglês

10.1109/t-ed.1979.19555

1557-9646

M.A. Shibib, F.A. Lindholm, J.G. Fossum,

Semiconductor materials and interfaces

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage V OC in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of V OC in silicon solar cells and the common-emitter current gain in bipolar transistors.