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Finesse enhancement in silicon-on-insulator two-ring resonator system

2008; American Institute of Physics; Volume: 92; Issue: 10 Linguagem: Inglês

10.1063/1.2894203

1520-8842

Landobasa Y. M. Tobing, Desmond C. S. Lim, Pieter Dumon, Roel Baets, Mee‐Koy Chin,

Advanced Fiber Laser Technologies

We demonstrate experimentally the finesse enhancement in a pair of mutually coupled ring resonators coupled to two buses fabricated in silicon-on-insulator technology, as proposed theoretically in an earlier paper. A finesse close to 100 (or Q=30000) is obtained in a two-ring system, with the outer ring double the size of the inner ring, and an external coupling coefficient of 34%. The maximum finesse enhancement relative to the single-ring structure is 14 times, in good agreement with the theoretical prediction.