Growth of self-assembled GaN quantum dots via the vapor–liquid–solid mechanism
2002; American Institute of Physics; Volume: 81; Issue: 17 Linguagem: Inglês
10.1063/1.1514394
ISSN1520-8842
AutoresChih‐Wei Hu, A. Bell, F. A. Ponce, David J. Smith, I. S. T. Tsong,
Tópico(s)Ga2O3 and related materials
ResumoSelf-assembled nanometer-scale GaN quantum dots were fabricated on 6H–SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.
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