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Current Activity in CNRS‐Sophia Antipolis Regarding Wide‐Gap II–VI Materials

1995; Wiley; Volume: 187; Issue: 2 Linguagem: Inglês

10.1002/pssb.2221870226

1521-3951

J. P. Faurie, Paul Brunet, C. Morhain, C. Ongaretto, E. Tournié,

Electronic and Structural Properties of Oxides

Abstract Preliminary results about MBE growth and characterization of ZnSe‐based alloys and multi‐quantum wells (MQW) are presented. Undoped ZnSe and Zn 1− x Cd x Se compounds exhibiting structural and optical properties, comparable to the best results previously published, are grown. RHEED intensity oscillations are observed during ZnSe and Zn 1− x Cd x Se growth. Several Zn 1− x Cd x Se/ZnSe MQWs are grown. RHEED intensity analysis is used to accurately control the well thicknesses. The MQWs produce very intense and sharp photoluminescence peaks. The sharpness of interfaces is confirmed by X‐ray analysis. Cl‐doped ZnSe epilayers with doping levels at 77 K ranging from 6 × 10 15 to 6 × 10 18 cm −3 are obtained.