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Ambipolar transport of carrier density fluctuations in germanium

1958; Elsevier BV; Volume: 24; Issue: 6-10 Linguagem: Inglês

10.1016/s0031-8914(58)80087-7

1873-1767

Jim Hill, K. M. van Vliet,

Silicon Nanostructures and Photoluminescence

The spectrum of generation-recombination noise in semi-conductors may differ from the usual form at relatively high field strengths or relatively short drift times of the carriers. In contrast to previous opinions it is shown that such a modification occurs only if the ambipolar drift velocity is sufficiently large. Accordingly, the sweeping of carriers through the sample by the electric field has no effect in material with a single type of carrier or in intrinsic material, but should show up in near-intrinsic materials. Measurements, made to detect this effect, completely confirmed this behavior. From the “resonances” in the spectra the ambipolar drift time was determined and found to be in good agreement with the calculated values.