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Weak-Field Magnetoresistance in p -Type Silicon

1958; American Institute of Physics; Volume: 109; Issue: 4 Linguagem: Inglês

10.1103/physrev.109.1098

1536-6065

Donald Long, John Myers,

Semiconductor materials and interfaces

Measurements of the three weak-field magnetoresistance coefficients and the Hall mobility have been made at a number of different temperatures between 77\ifmmode^\circ\else\textdegree\fi{}K and 350\ifmmode^\circ\else\textdegree\fi{}K on $p$-type silicon samples ranging in resistivity from 0.15 to 115 ohm-cm. The results indicate a marked temperature dependence of the anisotropies of the energy band structure and/or the scattering. The weak-field magnetoresistance coefficients happen to satisfy nearly the same symmetry relations above about 275\ifmmode^\circ\else\textdegree\fi{}K as those satisfied by $n$-type germanium.