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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

2014; American Institute of Physics; Volume: 115; Issue: 22 Linguagem: Inglês

10.1063/1.4882117

1520-8850

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu,

Integrated Circuits and Semiconductor Failure Analysis

Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53 V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73 eV calculated from the thermoionic emission theory; the VD was about 1.5 V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.