Epitaxial growth in Cu/Si(001)2 × 1 at high temperatures
1991; Elsevier BV; Volume: 241; Issue: 3 Linguagem: Inglês
10.1016/0039-6028(91)90101-w
ISSN1879-2758
AutoresT. Ichinokawa, Takahiro Inoue, Heikan Izumi, Y. Sakai,
Tópico(s)Force Microscopy Techniques and Applications
ResumoThe growth mechanism of Cu/Si(001)2 × 1 has been studied by means of scanning RHEED (reflection high energy electron diffraction) microscopy and scanning Auger electron spectroscopy. We obtained the following experimental results: (1) At room temperature, an intermixing layer of Cu with the Si surface is formed and no defined interface structure is observed. (2) At high temperatures (T ∼ 500 °C), anisotropic growth of islands is observed on Si(001)2 × 1 and the long axis of the islands corresponds to the direction normal to the dimmer row. The distribution of the anisotropic islands is closely correlated with the domain structure of 2 × 1 and 1 × 2. (3) The islands are composed of Cu-silicide and the interface regions between the islands and the substrate are rich in Si. (4) The small reduction of the Si Auger signal with increasing Cu coverage (0–100 ML) upon deposition at 500 ° C is explained by three-dimensional nucleation of islands with a low density of on the Si clean surface 1 × 1 structure. Island formation occurs in a modified mode of Volmer-Weber growth. Lastly, the nucleation mechanism of the Cu-silicide islands is discussed.
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