Fabrication and Charaterization of Oxide Thin Film Transistor
2013; Volume: 26; Issue: 4 Linguagem: Inglês
10.4313/jkem.2013.26.4.275
ISSN2288-3258
Autores Tópico(s)Nanowire Synthesis and Applications
ResumoThin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ( $V_{th}$ ) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.
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