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Artigo Acesso aberto Revisado por pares
BIBTEX RIS

Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells

2013; Elsevier BV; Volume: 378; Linguagem: Inglês

10.1016/j.jcrysgro.2012.12.153

ISSN

1873-5002

Autores

M. Ajmal Khan, Kosuke O. Hara, Kotaro Nakamura, Weijie Du, Masakazu Baba, Katsuaki Toh, Mitsushi Suzuno, Kaoru Toko, Noritaka Usami, Takashi Suemasu,

Tópico(s)

Silicon and Solar Cell Technologies

Resumo

We have successfully grown a-axis-oriented p-type BaSi 2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE).The hole concentration in B-doped BaSi 2 was controlled in the range between 10 17 and 10 19 cm -3 at room temperature by changing the temperature of the B Knudsen cell crucible.The acceptor level was estimated to be approximately 23 meV.

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